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Ultrathin ferroelectric capacitors for next-generation memory devices
An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...
The next generation of high-bandwidth memory, HBM4, was widely expected to require hybrid bonding to unlock a 16-high memory ...
Researchers from the Institute of Science Tokyo and Canon ANELVA Corporation built an ultrathin ferroelectric memory ...
High Bandwidth Memory (HBM) is the commonly used type of DRAM for data center GPUs like NVIDIA's H200 and AMD's MI325X. High Bandwidth Flash (HBF) is a stack of flash chips with an HBM interface. What ...
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