Nature

Effects of nitrogen passivation on the capture cross section energy distribution of 4H-SiC/SiO2 interface defects and the temperature dependences of leakage current

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
Business Wire

JEDEC Wide Bandgap Power Semiconductor Committee Publishes its First Guideline for Silicon Carbide (SiC) Based Power Conversion Devices

ARLINGTON, Va.--(BUSINESS WIRE)--JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, announces the publication of JEP183: Guidelines ...
Nature

Small surface potential fluctuation near the valence band edge at nitrided 4H-SiC(0001)/SiO2 interfaces

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
Electronics Weekly

Raytheon and Newcastle Uni combine on SiC

Raytheon and Newcastle University are to work together to enhance the performance of SiC electronic devices, specifically for Raytheon’s own SiC CMOS process. Raytheon And the university are studying ...