Freescale Semiconductor, supplier of high-power radio-frequency (RF) power transistors for 2.5G and 3G wireless base-station amplifiers, has shipped more than 10 million high-power, high-frequency RF ...

Microsemi Corporation announced its 1011GN-700ELM, the first in a family of radio frequency (RF) transistors for high-power air traffic control (ATC), secondary surveillance radio (SSR) applications.

Malvern, Pennsylvania — Vishay's TSDF2005W and TSDF2020W bipolar RF transistors feature 25GHz transition frequency, low noise figures of 1.2 dB and 1.1 dB and very high power gain values of 21 dB and ...

Arrays of carbon nanotubes can be used to build radio-frequency transistors with a higher operating frequency and better linearity than silicon technology. Carbon nanotubes have long been considered a ...

Power-Amplifier (PA) and base-station manufacturers are faced with a series of similar problems. They both have a common interest in keeping base stations cool and minimizing cost. And they each have ...

CARLSBAD, Calif.--(BUSINESS WIRE)--MaxLinear Inc. (NASDAQ: MXL) and RFHIC (KOSDAQ: 218410) today announced a collaboration to deliver a production-ready 400MHz Power Amplifier (PA) solution for 5G ...

A new technical paper titled “Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure” was published by researchers at Purdue University and won the 2022 Device ...

Atomera’s oxygen-based epitaxial technology is addressing problematic parasitic channels in GaN-on-silicon HEMTs. Facing a ...

Radiofrequency (RF) switches are pervasive in modern communication and connectivity systems such as cellular networks, satellite communications and radar systems. Contemporary systems typically use ...

Qorvo’s QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT, which operates from 30MHz to 1,200MHz. The integrated input matching network enables wideband gain and power performance ...