EDN

IMEC details high-k metal gate planar CMOS progress

At the IEEE International Electron Devices Meeting being held this week, Leuven, Belgium-based nanotechnology research center IMEC is reporting significant progress in improving the performance of ...
EDN

IMEC outlines nickel-silicide metal-gate CMOS

LONDON — Belgian research organization IMEC has presented on a scheme to use fully-silicided (FUSI) nickel-silicide metal gates with high-k dielectric CMOS transistors at the International Electron ...
Semiconductor Engineering

Designing into A Foundry Low-Power High-k Metal Gate 28nm CMOS Solution

28nm Super Low Power is the low power CMOS offering delivered on a bulk silicon substrate for mobile consumer and digital consumer applications. The 28nm process technology is slated to become the ...
insideHPC

Diraq Says It Drives 2-Qubit Gate Accuracy in CMOS above 99%

SYDNEY, AUSTRALIA – AUGUST 20, 2024 – Quantum computing company Diraq announced it has demonstrated consistent and repeatable operation with above 99 percent fidelity of two-qubit gates in the SiMOS ...