A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
Vertical Semiconductor's CEO discusses scaling FinFET vertical GaN on engineered substrates for AI data center power ...
Inside every electronic device, the flow of electricity is controlled by a switch called a transistor. For decades, these switches were made from silicon. More recently, engineers have turned to a ...
Suppose you want to get best performance in your GaN design. In that case, it is vital to understand the similarities and differences between the various GaN power transistors and their silicon ...
Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a girl's best friend. Their groundbreaking research focuses on gallium nitride (GaN) transistors, ...
Dublin, Dec. 16, 2025 (GLOBE NEWSWIRE) -- The "The Global Power Electronics Market 2026-2036" has been added to ResearchAndMarkets.com's offering. Power electronics is no longer confined to specialist ...
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its ...
A research team has fabricated a gallium nitride (GaN) transistor using diamond, which of all natural materials has the highest thermal conductivity on earth, as a substrate, and they succeeded in ...