Semiconductor Engineering

Stress-Related Local Layout Effects In FinFET Technology And Device Design Sensitivity

“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...
Semiconductor Engineering

Automatic Layout Generator Targeting Region-based Layouts for Advanced FinFET-Based Full-Custom Circuits (UT Austin/NVIDIA)

A technical paper titled “AutoCRAFT: Layout Automation for Custom Circuits in Advanced FinFET Technologies” was published by researchers at UT Austin and NVIDIA. “This paper presents AutoCRAFT, an ...
Business Wire

Cadence Expands Virtuoso Platform with Enhanced System Design, Advanced Node Support Down to 5nm, and Simulation-Driven Layout

SAN JOSE, Calif.--(BUSINESS WIRE)--Cadence Design Systems, Inc. (NASDAQ: CDNS) today introduced major enhancements to its Cadence ® Virtuoso ® custom IC design platform that improve electronic system ...
Nasdaq

Keysight, Synopsys, and Ansys Accelerate RFIC Semiconductor Design with New Reference Flow for TSMC’s Advanced 4nm RF FinFET Process

New reference flow offers open, efficient radio frequency design solution using TSMC N4PRF process Industry-leading electromagnetic simulation tools boost WiFi-7 system performance and power ...
Electronic Design

Identifying transistor-level yield limiters in the FinFET era

As the digital semiconductor manufacturing process moves into the FinFET era, more and more front-end-of-line (FEOL) defects are observed due to extremely small feature size and complex manufacturing ...
Electronic Design

16nm/14nm FinFETs: Enabling The New Electronics Frontier

The next frontier in the electronics industry is the FinFET, a new type of multi-gate 3D transistor that offers tremendous power and performance advantages compared to traditional, planar transistors.
EDN

Address FinFET test challenges

FinFET technology is seen as the answer to fabrication processes below 20 nm. However, FinFET also presents a lot of uncertainty and concern related to defect manifestation, necessary test methods, ...
Nasdaq

Keysight, Synopsys, and Ansys Accelerate RFIC Semiconductor Design with New Reference Flow for TSMC's Most Advanced 4nm RF FinFET Process

New reference flow offers open, efficient radio frequency design solution that supports streamlined migration from previous process nodes Industry-leading electromagnetic simulation tools boost 5G/6G ...